Structural and vibrational properties of Sb2S3: Practical methodologies for accelerated research and application of this low dimensional material.

Recently, the interest for the family of low dimensional materials has increased significantly due to the anisotropic nature of their fundamental properties. Among them, antimony sulfide (Sb2S3) is considered a suitable material for various solid-state devices. Although the main advantages and physicochemical properties of Sb2S3 are known, some doubtful information remains in literature and methodologies to easily assess its critical properties are missing. In this study, an advanced characterization of several types of Sb2S3 samples, involving the Rietveld refinement of structural properties, and Raman spectroscopy analysis, completed with lattice dynamics investigations reveal important insights into the structural and vibrational characteristics of the material. Based on the gathered data, fast, non-destructive, and non-invasive methodologies for assessment of the crystallographic orientation and point defect concentration of Sb2S3 are proposed. With a high resolution in-sample and in-situ assessment, these methodologies will serve for accelerating the research and application of Sb2S3 in the research field.

Accelerating the Development of Thin Film Photovoltaic Technologies: An Artificial Intelligence Assisted Methodology Using Spectroscopic and Optoelectronic Techniques.

Thin film photovoltaic (TFPV) materials and devices present a high complexity with multiscale, multilayer, and multielement structures and with complex fabrication procedures. To deal with this complexity, the evaluation of their physicochemical properties is critical for generating a model that proposes strategies for their development and optimization. However, this process is time-consuming and requires high expertise. In this context, the adoption of combinatorial analysis (CA) and artificial intelligence (AI) strategies represents a powerful asset for accelerating the development of these complex materials and devices. This work introduces a methodology to facilitate the adoption of AI and CA for the development of TFPV technologies. The methodology covers all the necessary steps from the synthesis of samples for CA to data acquisition, AI-assisted data analysis, and the extraction of relevant information for research acceleration. Each step provides details on the necessary concepts, requirements, and procedures and are illustrated with examples from the literature. Then, the application of the methodology to a complex set of samples from a TFPV production line highlights its ability to rapidly glean significant insights even in intricate scenarios. The proposed methodology can be applied to other types of materials and devices beyond PV and using different characterization techniques.

Raman scattering and spectroscopic ellipsometry studies of Sb2S3 and Sb2Se3 bulk polycrystals.

Antimony sulfide (Sb2S3) and antimony selenide (Sb2Se3) compounds have attracted considerable attention for applications in different optoelectronic devices due to their notable optical and electrical properties, and due to the strong anisotropy of these properties along different crystallographic directions. However, the efficient use of these promising compounds still requires significant efforts in characterization of their fundamental properties. In the present study, Raman scattering and spectroscopic ellipsometry were used to investigate the vibrational and optical properties of Sb2Se3 and Sb2S3 bulk polycrystals grown by the modified Bridgman method. The first technique proved the presence of the desired Sb2S3 and Sb2Se3 phases in the analyzed ingots and confirmed the absence of any preferential crystallographic orientation at the measured surface of the samples. Spectroscopic ellipsometry was performed using a multi-oscillator Tauc-Lorentz dispersion model, and yielded a complex dielectric function of chalcogenides over the range 1.0-4.6 eV with a three phase model (ambient, surface and bulk materials). Finally, spectral data on the refractive index, the extinction coefficient, the absorption coefficient and the reflectivity at normal incidence, R, were obtained, which serve as a reference for the optical modeling of optoelectronic devices based on polycrystalline Sb2S3 and Sb2Se3 compounds.

Overcoming Limitations in Water-Ethanol Sprayed Superstrate Solar Cells by Compositional Engineering of Cu2CdSn(S,Se)4.

The increasing demand for solar energy requires materials from earth-abundant elements to ensure cost-effective production. One such light harvester Cu2CdSn(S,Se)4 fulfills this property. We report the development of functional solar cells based on Cu2CdSn(S,Se)4, which has been previously unreported. Furthermore, we deposited the thin films of Cu2CdSn(S,Se)4 by spray pyrolysis using environmentally benign solvents, in a superstrate architecture, reducing the potential cost of upscaling, the environmental hazards, and enabling its use in semitransparent or tandem solar cells. We analyze the Cu2CdSn(S,Se)4 and its optoelectronic characteristics with different sulfur and selenium ratios in the composition. We noted that Se is homogeneously distributed in the absorber and electron transport layer, forming a Cd(S,Se) phase that impacts the optoelectronic properties. The introduction of Se, up to 30%, is found to have a positive impact on the solar cell performance, largely improving the fill factor and absorption in the infrared region, while the voltage deficit is reduced. The device with a Cu2CdSn(S2.8Se1.2) composition had a 3.5% solar-to-electric conversion efficiency, which is on par with the reported values for chalcogenides and the first report using Cu2CdSn(S,Se)4. We identified the critical factors that limit the efficiency, revealing pathways to further reduce the losses and improve the performance. This work provides the first proof of concept of a novel material, paving the way for developing cost-efficient solar cells based on earth-abundant materials.

Controlling the Anionic Ratio and Gradient in Kesterite Technology.

Accurate anionic control during the formation of chalcogenide solid solutions is fundamental for tuning the physicochemical properties of this class of materials. Compositional grading is the key aspect of band gap engineering and is especially valuable at the device interfaces for an optimum band alignment, for controlling interface defects and recombination and for optimizing the formation of carrier-selective contacts. However, a simple and reliable technique that allows standardizing anionic compositional profiles is currently missing for kesterites and the feasibility of achieving a compositional gradient remains a challenging task. This work aims at addressing these issues by a simple and innovative technique. It basically consists of first preparing a pure sulfide absorber with a specific thickness followed by the synthesis of a pure selenide part of complementary thickness on top of it. Specifically, the technique is applied to the synthesis of Cu2ZnSn(S,Se)4 and Cu2ZnGe(S,Se)4 kesterite absorbers, and a series of characterizations are performed to understand the anionic redistribution within the absorbers. For identical processing conditions, different Se incorporation dynamics is identified for Sn- and Ge-based kesterites, leading to a homogeneous or graded composition in depth. It is first demonstrated that for Sn-based kesterite the anionic composition can be perfectly controlled through the thicknesses ratio of the sulfide and selenide absorber parts. Then, it is demonstrated that for Ge-based kesterite an anionic (Se-S) gradient is obtained and that by adjusting the processing conditions the composition at the back side can be finely tuned. This technique represents an innovative approach that will help to improve the compositional reproducibility and determine a band gap grading strategy pathway for kesterites. Furthermore, due to its simplicity and reliability, the proposed methodology could be extended to other chalcogenide materials.

Transition-Metal Oxides for Kesterite Solar Cells Developed on Transparent Substrates.

Fabrication on transparent soda-lime glass/fluorine-doped tin oxide (FTO) substrates opens the way to advanced applications for kesterite solar cells such as semitransparent, bifacial, and tandem devices, which are key to the future of the PV market. However, the complex behavior of the p-kesterite/n-FTO back-interface potentially limits the power conversion efficiency of such devices. Overcoming this issue requires careful interface engineering. This work empirically explores the use of transition-metal oxides (TMOs) and Mo-based nanolayers to improve the back-interface of Cu2ZnSnSe4, Cu2ZnSnS4, and Cu2ZnSn(S,Se)4 solar cells fabricated on transparent glass/FTO substrates. Although the use of TMOs alone is found to be highly detrimental to the devices inducing complex current-blocking behaviors, the use of Mo:Na nanolayers and their combination with n-type TMOs TiO2 and V2O5 are shown to be a very promising strategy to improve the limited performance of kesterite devices fabricated on transparent substrates. The optoelectronic, morphological, structural, and in-depth compositional characterization performed on the devices suggests that the improvements observed are related to a combination of shunt insulation and recombination reduction. This way, record efficiencies of 6.1, 6.2, and 7.9% are obtained for Cu2ZnSnSe4, Cu2ZnSnS4, and Cu2ZnSn(S,Se)4 devices, respectively, giving proof of the potential of TMOs for the development of kesterite solar cells on transparent substrates.

Improving Carrier-Transport Properties of CZTS by Mg Incorporation with Spray Pyrolysis.

High nonradiative recombination, low diffusion length and band tailing are often associated with a large open circuit voltage deficit, which results in low efficiency of Cu2ZnSnS4 (CZTS) solar cells. Recently, cation substitution in CZTS has gained interest as a plausible solution to suppress these issues. However, the common substitutes, Ag and Cd, are not ideal due to their scarcity and toxicity. Other transition-metal candidates (e.g., Mn, Fe, Co, or Ni) are multivalent, which may form harmful deep-level defects. Magnesium, as one of the viable substitutes, does not have these issues, as it is very stable in +2 oxidation state, abundant, and nontoxic. In this study, we investigate the effect of Mg incorporation in sulfur-based Cu2ZnSnS4 to form Cu2MgxZn1-xSnS4 by varying x from 0.0 to 1.0. These films were fabricated by chemical spray pyrolysis and the subsequent sulfurization process. At a high Mg content, it is found that Mg does not replace Zn to form a quaternary compound, which leads to the appearance of the secondary phases in the sample. However, a low Mg content (Cu2Mg0.05Zn0.95SnS4) improves the power conversion efficiency from 5.10% (CZTS) to 6.73%. The improvement is correlated to the better carrier-transport properties, as shown by a lesser amount of the ZnS secondary phase, higher carrier mobility, and shallower acceptor defects level. In addition, the Cu2Mg0.05Zn0.95SnS4 device also shows better charge-collection property based on the higher fill factor and quantum efficiency despite having lower depletion width. Therefore, we believe that the addition of a small amount of Mg is another viable route to improve the performance of the CZTS solar cell.

Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cells.

Six different thin film solar cells consisting of either orthorhombic (α-SnS) or cubic (π-SnS) tin(ii) sulfide absorber layers have been fabricated, characterized and evaluated. Absorber layers of either π-SnS or α-SnS were selectively deposited by temperature controlled Aerosol Assisted Chemical Vapor Deposition (AA-CVD) from a single source precursor. α-SnS and π-SnS layers were grown on molybdenum (Mo), Fluorine-doped Tin Oxide (FTO), and FTO coated with a thin amorphous-TiO x layer (am-TiO x -FTO), which were shown to have significant impact on the growth rate and morphology of the as deposited thin films. Phase pure α-SnS and π-SnS thin films were characterized by X-ray diffraction analysis (XRD) and Raman spectroscopy (514.5 nm). Furthermore, a series of PV devices with an active area of 0.1 cm2 were subsequently fabricated using a CdS buffer layer, intrinsic ZnO (i-ZnO) as an insulator and Indium Tin Oxide (ITO) as a top contact. The highest solar conversion efficiency for the devices consisting of the α-SnS polymorph was achieved with Mo (η = 0.82%) or FTO (η = 0.88%) as the back contacts, with respective open-circuit voltages (V oc) of 0.135 and 0.144 V, and short-circuit current densities (J sc) of 12.96 and 12.78 mA cm-2. For the devices containing the π-SnS polymorph, the highest efficiencies were obtained with the am-TiO x -FTO (η = 0.41%) back contact, with a V oc of 0.135 V, and J sc of 5.40 mA cm-2. We show that mild post-fabrication hot plate annealing can improve the J sc, but can in most cases compromise the V oc. The effect of sequential annealing was monitored by solar conversion efficiency and external quantum efficiency (EQE) measurements.

Magnetotransport and conductivity mechanisms in Cu2ZnSnxGe1-xS4 single crystals.

Resistivity, ρ(T), and magnetoresistance (MR) are investigated in the Cu2ZnSnxGe1-xS4 single crystals, obtained by the chemical vapor transport method, between x = 0-0.70, in the temperature range of T ~ 50-300 K in pulsed magnetic field of B up to 20 T. The Mott variable-range hopping (VRH) conductivity is observed within broad temperature intervals, lying inside that of T ~ 80-180 K for different x. The nearest-neighbor hopping conductivity and the charge transfer, connected to activation of holes into the delocalized states of the acceptor band, are identified above and below the Mott VRH conduction domain, respectively. The microscopic electronic parameters, including width of the acceptor band, the localization radius and the density of the localized states at the Fermi level, as well as the acceptor concentration and the critical concentration of the metal-insulator transition, are obtained with the analysis of the ρ(T) and MR data. All the parameters above exhibit extremums near x = 0.13, which are attributable mainly to the transition from the stannite crystal structure at x = 0 to the kesterite-like structure near x = 0.13. The detailed analysis of the activation energy in the low-temperature interval permitted estimations of contributions from different crystal phases of the border compounds into the alloy structure at different compositions.

Mechanisms of charge transfer and electronic properties of Cu2ZnGeS4 from investigations of the high-field magnetotransport.

Recent development of the thin film solar cells, based on quaternary compounds, has been focused on the Ge contain compounds and their solid solutions. However, for effective utilization of Cu2ZnGeS4, deeper investigations of its transport properties are required. In the present manuscript, we investigate resistivity, ρ (T), magnetoresistance and Hall effect in p-type Cu2ZnGeS4 single crystals in pulsed magnetic fields up to 20 T. The dependence of ρ (T) in zero magnetic field is described by the Mott type of the variable-range hopping (VRH) charge transfer mechanism within a broad temperature interval of ~100-200 K. Magnetoresistance contains the positive and negative components, which are interpreted by the common reasons of doped semiconductors. On the other hand, a joint analysis of the resistivity and magnetoresistance data has yielded series of important electronic parameters and permitted specification of the Cu2ZnGeS4 conductivity mechanisms outside the temperature intervals of the Mott VRH conduction. The Hall coefficient is negative, exhibiting an exponential dependence on temperature, which is quite close to that of ρ(T). This is typical of the Hall effect in the domain of the VRH charge transfer.

Resonant Raman scattering based approaches for the quantitative assessment of nanometric ZnMgO layers in high efficiency chalcogenide solar cells.

This work reports a detailed resonant Raman scattering analysis of ZnMgO solid solution nanometric layers that are being developed for high efficiency chalcogenide solar cells. This includes layers with thicknesses below 100 nm and compositions corresponding to Zn/(Zn + Mg) content rations in the range between 0% and 30%. The vibrational characterization of the layers grown with different compositions and thicknesses has allowed deepening in the knowledge of the sensitivity of the different Raman spectral features on the characteristics of the layers, corroborating the viability of resonant Raman scattering based techniques for their non-destructive quantitative assessment. This has included a deeper analysis of different experimental approaches for the quantitative assessment of the layer thickness, based on (a) the analysis of the intensity of the ZnMgO main Raman peak; (b) the evaluation of the changes of the intensity of the main Raman peak from the subjacent layer located below the ZnMgO one; and (c) the study of the changes in the relative intensity of the first to second/third order ZnMgO peaks. In all these cases, the implications related to the presence of quantum confinement effects in the nanocrystalline layers grown with different thicknesses have been discussed and evaluated.

Polarized Raman scattering study of kesterite type Cu2ZnSnS4 single crystals.

A non-destructive Raman spectroscopy has been widely used as a complimentary method to X-ray diffraction characterization of Cu2ZnSnS4 (CZTS) thin films, yet our knowledge of the Raman active fundamental modes in this material is far from complete. Focusing on polarized Raman spectroscopy provides important information about the relationship between Raman modes and CZTS crystal structure. In this framework the zone-center optical phonons of CZTS, which is most usually examined in active layers of the CZTS based solar cells, are studied by polarized resonant and non-resonant Raman spectroscopy in the range from 60 to 500 cm(-1) on an oriented single crystal. The phonon mode symmetry of 20 modes from the 27 possible vibrational modes of the kesterite structure is experimentally determined. From in-plane angular dependences of the phonon modes intensities Raman tensor elements are also derived. Whereas a strong intensity enhancement of the polar E and B symmetry modes is induced under resonance conditions, no mode intensity dependence on the incident and scattered light polarization configurations was found in these conditions. Finally, Lyddane-Sachs-Teller relations are applied to estimate the ratios of the static to high-frequency optic dielectric constants parallel and perpendicular to c-optical axis.

Structural study and Raman scattering analysis of Cu2ZnSiTe4 bulk crystals.

Bulk crystals of Cu(2)ZnSiTe(4) (CZSiTe) have been prepared by modified Bridgman method and have been investigated by single crystal X-ray method, Energy Dispersive X-Ray analysis and Raman scattering techniques. The structural studies revealed that the CZSiTe compounds crystallizes in the tetragonal space group I4¯2m, with a = b = 5.9612(1) Å and c = 11.7887(4) Å at 293 K. The Raman spectrum characteristic of the crystals exhibits nine peaks, with two dominant peaks at approximately 134 cm(-1) and 151 cm(-1) that can be used as fingerprint peaks for the identification of this compound. The Raman peaks were analyzed on the basis of the derived irreducible representation for the zone center phonons and by comparison with experimental and theoretical data from close related semiconductors as Cu(2)FeSnS(4) and Cu(2)ZnSnSe(4).